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Journal of Materials Research

Volumn 17, Issue 2, 2002, Pages 479-486

Transmission electron microscopy study of Ge implanted into SiC

(5) Gorelik, T a Kaiser, U a Schubert, Ch a Wesch, W a Glatzel, Uwe a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; OPTICAL RESOLVING POWER; PRECIPITATION (CHEMICAL); SEMICONDUCTING GERMANIUM; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

NANOCLUSTERS;

SILICON CARBIDE;

EID: 0036477595 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2002.0067 Document Type: Article

Times cited : (12)

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