Quantum confinement in semiconductor Ge quantum dots

Solid State Communications

Volumn 102, Issue 6, 1997, Pages 479-484

  Ren, Shang Yuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A. Nanostructures; A. Semiconductors; D. Electronic states (localized); D. Optical properties

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRON ENERGY LEVELS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GERMANIUM;

QUANTUM CONFINEMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031141780     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00001-X     Document Type: Article

References (11)

1. For recent reviews, see Wang, Y. and Herron, N., J. Phys. Chem., 95, 1991, 525; Brus, L.E., Appl. Phys., A53, 1991, 465; Alivisatos, A.P., Science, 271, 1996, 933.
2. For recent reviews, see Wang, Y. and Herron, N., J. Phys. Chem., 95, 1991, 525; Brus, L.E., Appl. Phys., A53, 1991, 465; Alivisatos, A.P., Science, 271, 1996, 933.
3. For recent reviews, see Wang, Y. and Herron, N., J. Phys. Chem., 95, 1991, 525; Brus, L.E., Appl. Phys., A53, 1991, 465; Alivisatos, A.P., Science, 271, 1996, 933.
4. Ren, S.Y., Phys. Rev., B55, 1997, 4665.
5. Ren, S.Y. (submitted for publication).
6. The calculations were based on the approach developed in Ren, S.Y. and Dow, J.D., Phys. Rev., B45, 1992, 6492.
7. All the tight binding parameters used in the calculation are from Vogl, P., Hjalmarson, H.P. and Dow, J.D., J. Phys. Chem. Solids, 44, 1983, 365.
8. Ren, S.Y. (to be published).
9. Dresselhaus, G., Kip, A.F. and Kittel, C., Phys. Rev., 98, 1955, 368.
10. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series, Vol. 17a, Semiconductors: Physics of Group IV elements and III-V Compounds (Edited by O. Madelung, M. Schulz and H. Weiss), Springer-Verlag, Berlin (1982). Valence band parameters for diamond C were given in Reggiani, L., Waechter, D., Zukotynski, S., Phys. Rev., B28, 1983, 3550.
11. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series, Vol. 17a, Semiconductors: Physics of Group IV elements and III-V Compounds (Edited by O. Madelung, M. Schulz and H. Weiss), Springer-Verlag, Berlin (1982). Valence band parameters for diamond C were given in Reggiani, L., Waechter, D., Zukotynski, S., Phys. Rev., B28, 1983, 3550.