Unified approach for hot-carrier degradation of current gain and 1/f noise of polysilicon emitter bipolar transistors

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 1997, Pages 104-107

  Decoutere, S ^a   Simoen, E ^a   Vancuyck, G ^a   Deferm, L ^a   Claeys, C ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HOT CARRIERS; SEMICONDUCTOR DEVICE MODELS;

REVERSE EMITTER/BASE STRESS CONDITIONS;

BIPOLAR TRANSISTORS;

EID: 0031383592     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)