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Volumn 35, Issue 1, 2000, Pages 125-133

Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0033682718     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0025-5408(00)00191-4     Document Type: Article
Times cited : (12)

References (39)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.