Electrical and optical characterization of (1 1 1) oriented GaP/Si diodes grown by CBE

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 454-458

  Ohlsson, B J ^a   Carlsson, S B ^a   Gustafsson, A ^a   Hakanson U ^a   Litwin, A ^a   Samuelson, L ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CHEMICAL BEAM EPITAXY; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON;

GALLIUM PHOSPHIDE;

SEMICONDUCTOR DIODES;

EID: 0034140289     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00597-7     Document Type: Article

References (11)

1. Kroemer H. J. Cryst. Growth. 81:1987;193.
2. Bi W.G., Mei X.B., Tu C.W. 164:1996;256.
3. Tanaka S., Umbach C.C., Blakely J.M., Tromp R.M., Mankos M. Appl. Phys. Lett. 69:1996;1235.
4. Homma Y., Aizawa N., Ogino T. Jpn. J. Appl. Phys. 35:1996;L241.
5. Harrison W.A. J. Vac. Sci. Technol. 14:1977;1016.
6. Landolt-Börnstein New Series, Physics of Grop IV Elements and III-V Compounds. 1982;Springer, Berlin.
7. Arnold D., Ketterson A., Henderson T., Klem J., Morkoç H. J. Appl. Phys. 57:1985;2880.
8. S.M. Sze, Physics of Semiconductor Devices, 2nd edition, Wiley, New York.
9. Wright S.L., Kroemer H., Inada M. J. Appl. Phys. 55:1984;2916.
10. Morgan T.N., Plaskett T.S., Petit G.D. Phys. Rev. 180:1969;845.
11. Samuelson L., Omling P., Grimmeiss H. J. Cryst. Growth. 68:1984;340.