-
2
-
-
0026837394
-
Study of twins in GaAs, GaP, and InAs crystals
-
Chen TP, Chen FR, Chuang YC, Guo YD, Peng JG, Huang TS, Chen LJ (1992) Study of twins in GaAs, GaP, and InAs crystals. J Cryst Growth 118:109
-
(1992)
J Cryst Growth
, vol.118
, pp. 109
-
-
Chen, T.P.1
Chen, F.R.2
Chuang, Y.C.3
Guo, Y.D.4
Peng, J.G.5
Huang, T.S.6
Chen, L.J.7
-
3
-
-
0039125400
-
The study of interfaces in GaAs
-
Cho NH, Rasmussen DR, McKernan S, Carter CB, Wagner DK (1988) The study of interfaces in GaAs. Mater Res Soc Proc 122: 33-38
-
(1988)
Mater Res Soc Proc
, vol.122
, pp. 33-38
-
-
Cho, N.H.1
Rasmussen, D.R.2
McKernan, S.3
Carter, C.B.4
Wagner, D.K.5
-
5
-
-
0030674892
-
Characterization of antiphase boundaries in GaP grown on Si
-
Cohen D, Carter CB (1997) Characterization of antiphase boundaries in GaP grown on Si. Mater Res Soc Symp Proc 442:503-508
-
(1997)
Mater Res Soc Symp Proc
, vol.442
, pp. 503-508
-
-
Cohen, D.1
Carter, C.B.2
-
6
-
-
85033959147
-
Determination of rigid-body lattice translations across antiphase and twin boundaries in compound semiconductors
-
New York: Springer-Verlag New York Inc.
-
Cohen D, Medlin DL, Carter CB (1998) Determination of rigid-body lattice translations across antiphase and twin boundaries in compound semiconductors. Microscopy and Microanalysis, Vol. 4, Suppl. 2, Proceedings: Microscopy and Microanalysis '98, Atlanta, Georgia, July 12-16, 1998, New York: Springer-Verlag New York Inc., pp. 786-787
-
(1998)
Microscopy and Microanalysis, Vol. 4, Suppl. 2, Proceedings: Microscopy and Microanalysis '98, Atlanta, Georgia, July 12-16, 1998
, vol.4
, pp. 786-787
-
-
Cohen, D.1
Medlin, D.L.2
Carter, C.B.3
-
7
-
-
0003545679
-
-
Amersterdam: North Holland Publishing
-
Cowley JM (1981) Diffraction Physics. Amersterdam: North Holland Publishing
-
(1981)
Diffraction Physics
-
-
Cowley, J.M.1
-
8
-
-
0001243705
-
Polarity determination of GaN films by ion channeling and convergent beam electron diffraction
-
Daudin B, Rouviere JL, Arlery M (1997) Polarity determination of GaN films by ion channeling and convergent beam electron diffraction. Appl Phys Lett 69:2480-2482
-
(1997)
Appl Phys Lett
, vol.69
, pp. 2480-2482
-
-
Daudin, B.1
Rouviere, J.L.2
Arlery, M.3
-
9
-
-
0024752972
-
The accommodation of misfit at {100} heterojunctions in III-V compound semiconductors by gliding dissociated dislocation
-
De Cooman BC, Carter CB (1989) The Accommodation of misfit at {100} heterojunctions in III-V compound semiconductors by gliding dissociated dislocation. Acta Metall 37:2765-2777
-
(1989)
Acta Metall
, vol.37
, pp. 2765-2777
-
-
De Cooman, B.C.1
Carter, C.B.2
-
11
-
-
0024752574
-
The characterization of misfit dislocations at {100} heterojunctions in III-V compound semiconductors
-
De Cooman BC, Carter CB, Chan KT, Shealy JR (1989) The characterization of misfit dislocations at {100} heterojunctions in III-V compound semiconductors. Acta Metall 37:2779-2793
-
(1989)
Acta Metall
, vol.37
, pp. 2779-2793
-
-
De Cooman, B.C.1
Carter, C.B.2
Chan, K.T.3
Shealy, J.R.4
-
12
-
-
0022197658
-
Lateral twins in the sphalerite structure
-
Bristol, UK: Institute of Physics
-
Durose K, Russell GJ, Woods J (1985) Lateral twins in the sphalerite structure. In: Microscopy of Semiconducting Materials 1985, Conference Series no. 76. Bristol, UK: Institute of Physics, pp 233-238
-
(1985)
Microscopy of Semiconducting Materials 1985, Conference Series No. 76
, pp. 233-238
-
-
Durose, K.1
Russell, G.J.2
Woods, J.3
-
13
-
-
0024701665
-
The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates
-
Ernst F, Pirouz P (1989) The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates. J Mater Res 4:834-842
-
(1989)
J Mater Res
, vol.4
, pp. 834-842
-
-
Ernst, F.1
Pirouz, P.2
-
14
-
-
0040903628
-
Dislocation etch pits in {111} and {111} surfaces in InSb
-
Gatos HC, Lavine MC (1960) Dislocation etch pits in {111} and {111} surfaces in InSb. J Appl Phys 31:643-646
-
(1960)
J Appl Phys
, vol.31
, pp. 643-646
-
-
Gatos, H.C.1
Lavine, M.C.2
-
15
-
-
0024621490
-
A systematic study of HREM imaging of sphalerite semiconductors
-
Glaisher RW, Spargo AEC, Smith DA (1989) A systematic study of HREM imaging of sphalerite semiconductors. Ultramicroscopy 27: 131-150
-
(1989)
Ultramicroscopy
, vol.27
, pp. 131-150
-
-
Glaisher, R.W.1
Spargo, A.E.C.2
Smith, D.A.3
-
17
-
-
0242507336
-
Grain boundaries in semiconductors
-
Grovenor CRM (1985) Grain boundaries in semiconductors. J Phys C 18:4079-4119
-
(1985)
J Phys C
, vol.18
, pp. 4079-4119
-
-
Grovenor, C.R.M.1
-
18
-
-
0000322890
-
Defects in the sphalerite structure
-
Holt DB (1962) Defects in the sphalerite structure. J Phys Chem Solids 23:1353-1362
-
(1962)
J Phys Chem Solids
, vol.23
, pp. 1353-1362
-
-
Holt, D.B.1
-
19
-
-
0000067004
-
Grain boundaries in the sphalerite structure
-
Holt DB (1964) Grain boundaries in the sphalerite structure. J Phys Chem Solids 25:1385-1395
-
(1964)
J Phys Chem Solids
, vol.25
, pp. 1385-1395
-
-
Holt, D.B.1
-
20
-
-
0023982895
-
Surface polarity and symmetry in semiconducting compounds
-
Holt DB (1988) Surface polarity and symmetry in semiconducting compounds. J Mater Sci 23:1131-1136
-
(1988)
J Mater Sci
, vol.23
, pp. 1131-1136
-
-
Holt, D.B.1
-
21
-
-
84977291175
-
Quantitative analysis of CBED to determine polarity and ionicity of ZnS-type crystals
-
Ishizuka K, Taftø J (1984) Quantitative analysis of CBED to determine polarity and ionicity of ZnS-type crystals. Acta Crystallogr B40:332-337
-
(1984)
Acta Crystallogr
, vol.B40
, pp. 332-337
-
-
Ishizuka, K.1
Taftø, J.2
-
22
-
-
0040309515
-
Dislocations and twins in czochralski-grown gallium phosphide single crystals
-
Laister D, Jenkins GM (1970) Dislocations and twins in czochralski-grown gallium phosphide single crystals. J Mater Sci 5:862-868
-
(1970)
J Mater Sci
, vol.5
, pp. 862-868
-
-
Laister, D.1
Jenkins, G.M.2
-
23
-
-
4243284469
-
"Wrong" bond interactions at inversion domain boundaries in GaAs
-
Lambrecht WRL, Amador C, Segall B (1992) "Wrong" bond interactions at inversion domain boundaries in GaAs. Phys Rev Lett 68:1363-1364
-
(1992)
Phys Rev Lett
, vol.68
, pp. 1363-1364
-
-
Lambrecht, W.R.L.1
Amador, C.2
Segall, B.3
-
25
-
-
0040309513
-
Determination of As and Ga planes by convergent beam electron diffraction
-
Liliental-Weber Z, Parechanian-Allen L (1986) Determination of As and Ga planes by convergent beam electron diffraction. Appl Phys Lett 49:1190-1192
-
(1986)
Appl Phys Lett
, vol.49
, pp. 1190-1192
-
-
Liliental-Weber, Z.1
Parechanian-Allen, L.2
-
26
-
-
0000437306
-
Structural characterization of bulk GaN crystals grown under high hydrostatic pressure
-
Liliental-Weber Z, Kisielowski C, Ravimov S, Chen Y, Washburn J, Grzegary I, Bockowshi M, Sun J, Porowski S (1997) Structural characterization of bulk GaN crystals grown under high hydrostatic pressure. J Electron Mater 25:1545
-
(1997)
J Electron Mater
, vol.25
, pp. 1545
-
-
Liliental-Weber, Z.1
Kisielowski, C.2
Ravimov, S.3
Chen, Y.4
Washburn, J.5
Grzegary, I.6
Bockowshi, M.7
Sun, J.8
Porowski, S.9
-
27
-
-
0022678828
-
Partial separations of extended α and β dislocations in II-VI semiconductors
-
Lu G, Cockayne DJH (1986) Partial separations of extended α and β dislocations in II-VI semiconductors. Philos Mag A 53:307-320
-
(1986)
Philos Mag A
, vol.53
, pp. 307-320
-
-
Lu, G.1
Cockayne, D.J.H.2
-
28
-
-
0032023412
-
Determination of crystal polarity by electron diffraction from a thin crystal
-
Mader W, Recnik A (1998) Determination of crystal polarity by electron diffraction from a thin crystal. Phys Status Solidi A 166: 381
-
(1998)
Phys Status Solidi A
, vol.166
, pp. 381
-
-
Mader, W.1
Recnik, A.2
-
29
-
-
0011744111
-
Non-centrosymmetry effects and polarity determination in III-V semiconductors
-
Marthinsen K, Lindheim T, Høier R (1997) Non-centrosymmetry effects and polarity determination in III-V semiconductors. Acta Crystallogr A53:366-375
-
(1997)
Acta Crystallogr
, vol.A53
, pp. 366-375
-
-
Marthinsen, K.1
Lindheim, T.2
Høier, R.3
-
30
-
-
85033957425
-
3 and relatated materials
-
New York: Springer-Verlag New York Inc.
-
3 and relatated materials. Microscopy and Microanalysis, Vol. 4, Suppl. 2, Proceedings: Microscopy and Microanalysis '98, Atlanta, Georgia, July 12-16, 1998, New York: Springer-Verlag New York Inc., pp. 596-597
-
(1998)
Microscopy and Microanalysis, Vol. 4, Suppl. 2, Proceedings: Microscopy and Microanalysis '98, Atlanta, Georgia, July 12-16, 1998
, pp. 596-597
-
-
Medlin, D.L.1
Smugeresky, J.E.2
Cohen, D.3
-
32
-
-
0028533260
-
New high-voltage atomic resolution microscope approaching 1 Å point resolution installed at Stuttgart
-
Phillipp F, Höschen R, Osaki M, Möbus G, Ruhle M (1994a) New high-voltage atomic resolution microscope approaching 1 Å point resolution installed at Stuttgart. Ultramicroscopy 56:1-10
-
(1994)
Ultramicroscopy
, vol.56
, pp. 1-10
-
-
Phillipp, F.1
Höschen, R.2
Osaki, M.3
Möbus, G.4
Ruhle, M.5
-
33
-
-
0039125399
-
Atomic resolution electron microscopy of III-V semiconductors
-
Electron Microscopy 1994, Applications in Materials Sciences. Les Ulis, France: Les Editions de Physique
-
Phillipp F, Schaible D, Jin-Phillipp NY (1994b) Atomic resolution electron microscopy of III-V semiconductors. In: Electron Microscopy 1994, Vol. 2A: Applications in Materials Sciences. Proceedings of the Thirteenth International Congress on Electron Microscopy. Les Ulis, France: Les Editions de Physique, pp 593-594
-
(1994)
Proceedings of the Thirteenth International Congress on Electron Microscopy
, vol.2 A
, pp. 593-594
-
-
Phillipp, F.1
Schaible, D.2
Jin-Phillipp, N.Y.3
-
34
-
-
0000674561
-
Anti-site bonds and the structure of interfaces in SiC
-
Pirouz P, Yang J (1990) Anti-site bonds and the structure of interfaces in SiC. Mater Res Soc Symp Proc 183:173-176
-
(1990)
Mater Res Soc Symp Proc
, vol.183
, pp. 173-176
-
-
Pirouz, P.1
Yang, J.2
-
35
-
-
0001603982
-
Antiphase boundaries in epitaxially grown β-SiC
-
Pirouz P, Chorey CM, Powel JW (1987) Antiphase boundaries in epitaxially grown β-SiC. Appl Phys Lett 50:221-223
-
(1987)
Appl Phys Lett
, vol.50
, pp. 221-223
-
-
Pirouz, P.1
Chorey, C.M.2
Powel, J.W.3
-
36
-
-
0001712691
-
Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
-
Poncé FA, Bour DP, Young WT, Saunders M, Steeds JW (1997) Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers. Appl Phys Lett 69:337-339
-
(1997)
Appl Phys Lett
, vol.69
, pp. 337-339
-
-
Poncé, F.A.1
Bour, D.P.2
Young, W.T.3
Saunders, M.4
Steeds, J.W.5
-
37
-
-
0008592587
-
The determination of rigid-body lattice translations in the study of coincidence grain boundary structure
-
Jerusalem: Tal International
-
Pond RC, Smith DA (1976) The determination of rigid-body lattice translations in the study of coincidence grain boundary structure. In: Proceedings of the Sixth European Congress of Electron Microscopy. Jerusalem: Tal International, pp 233-234
-
(1976)
Proceedings of the Sixth European Congress of Electron Microscopy
, pp. 233-234
-
-
Pond, R.C.1
Smith, D.A.2
-
38
-
-
0001211466
-
Rigid-body translation and bonding across {110} antiphase boundaries in GaAs
-
Rasmussen DR, McKernan S, Carter CB (1991) Rigid-body translation and bonding across {110} antiphase boundaries in GaAs. Phys Rev Lett 66:2629-2632
-
(1991)
Phys Rev Lett
, vol.66
, pp. 2629-2632
-
-
Rasmussen, D.R.1
McKernan, S.2
Carter, C.B.3
-
39
-
-
0020180362
-
Polarity and inversion twins in ZnSe crystals observed by high-resolution electron microscopy
-
Shiojiri M, Kaito C, Sekimoto S, Nakamura N (1982) Polarity and inversion twins in ZnSe crystals observed by high-resolution electron microscopy. Philos Mag A 46:495-505
-
(1982)
Philos Mag A
, vol.46
, pp. 495-505
-
-
Shiojiri, M.1
Kaito, C.2
Sekimoto, S.3
Nakamura, N.4
-
40
-
-
0019539536
-
Electrical properties of grain boundaries in n-type and p-type GaP
-
Siegel W, Kuhnel G, Ziegler E (1981) Electrical properties of grain boundaries in n-type and p-type GaP. Phys Stat Solidi A 64:249-259
-
(1981)
Phys Stat Solidi A
, vol.64
, pp. 249-259
-
-
Siegel, W.1
Kuhnel, G.2
Ziegler, E.3
-
41
-
-
0026375479
-
The use of electron diffraction in the determination of the polarity of II-VI and III-V semiconductors
-
Spellward P, James D (1991) The use of electron diffraction in the determination of the polarity of II-VI and III-V semiconductors. Inst Phys Conf Ser 119:375-376
-
(1991)
Inst Phys Conf Ser
, vol.119
, pp. 375-376
-
-
Spellward, P.1
James, D.2
-
43
-
-
0002614339
-
A simple method for the determination of structure-factor phase relationships and crystal polarity using electron diffraction
-
Taftø J, Spence JCH (1982) A simple method for the determination of structure-factor phase relationships and crystal polarity using electron diffraction. J Appl Crystallogr 15:60-64
-
(1982)
J Appl Crystallogr
, vol.15
, pp. 60-64
-
-
Taftø, J.1
Spence, J.C.H.2
-
44
-
-
0039125327
-
Electrical effects of dislocations in high resistivity GaAs
-
Thornton PR (1963) Electrical effects of dislocations in high resistivity GaAs. Solid-State Electron 6:677
-
(1963)
Solid-State Electron
, vol.6
, pp. 677
-
-
Thornton, P.R.1
-
45
-
-
0000849578
-
Inversion domain boundaries in aluminum nitride
-
Westwood AD, Notis MR (1991) Inversion domain boundaries in aluminum nitride. J Am Cer Soc 74:1226-1239
-
(1991)
J Am Cer Soc
, vol.74
, pp. 1226-1239
-
-
Westwood, A.D.1
Notis, M.R.2
-
47
-
-
0023271098
-
High-resolution lattice imaging study of twin boundaries in epitaxial films of ZnSe grown by metal organic vapor phase epitaxy
-
Williams JO, Wright AC (1987) High-resolution lattice imaging study of twin boundaries in epitaxial films of ZnSe grown by metal organic vapor phase epitaxy. Philos Mag A 55:99-110
-
(1987)
Philos Mag A
, vol.55
, pp. 99-110
-
-
Williams, J.O.1
Wright, A.C.2
-
49
-
-
0023420877
-
High resolution electron microscopy and etching study of twins in GaAs
-
Zandbergen HW, Weyher J, Van Landuyt J (1987) High resolution electron microscopy and etching study of twins in GaAs. J Cryst Growth 84:476-482
-
(1987)
J Cryst Growth
, vol.84
, pp. 476-482
-
-
Zandbergen, H.W.1
Weyher, J.2
Van Landuyt, J.3
|