SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 31, Issue 1, 2002, Pages 19-42

Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

(7) Fuhrer, A a Dorn, A a Luscher S a Heinzel, T a Ensslin, K a Wegscheider, W b Bichler, M c

a ETH ZURICH (Switzerland)

b UNIVERSITY OF REGENSBURG (Germany)

c WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

2DEG; Atomic force lithography; Semiconductor nanostructures

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; ELECTRON GAS; ELECTRONIC PROPERTIES; ELECTRONS; HETEROJUNCTIONS; OXIDATION; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SUPERLATTICES;

ATOMIC FORCE LITHOGRAPHY; TWO-DIMENSIONAL ELECTRON GASES;

NANOSTRUCTURED MATERIALS;

EID: 0036373159 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1006/spmi.2002.1015 Document Type: Review

Times cited : (80)

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