Investigation of the charge on threading edge dislocations in GaN by electron holography

Journal of Electron Microscopy

Volumn 51, Issue 2, 2002, Pages 105-112

  Jiao, Chengge ^a   Cherns, David ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Dislocation; Electron holography; GaN; Semi conducting III V materials; Thin film; Transmission electron microscopy

Indexed keywords

ARTICLE;

EDGE DISLOCATIONS; ELECTRON HOLOGRAPHY; ELECTRONS; GALLIUM NITRIDE; III-V SEMICONDUCTORS;

DISLOCATION; INNER POTENTIAL; LINE CHARGES; N-TYPE GAN; NEGATIVELY CHARGED; OFF-AXIS ELECTRON HOLOGRAPHY; SEMI CONDUCTING III-V MATERIALS; THIN-FILMS; THREADING EDGE DISLOCATION; TRANSMISSION ELECTRON;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 0036237886     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/jmicro/51.2.105     Document Type: Article

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