Direct observation of piezoelectric fields in GaN/InGaN/GaN strained quantum wells

Journal of Electron Microscopy

Volumn 49, Issue 2, 2000, Pages 281-291

  Barnard, J S ^a,b   Cherns, D ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

GaN InGaN GaN strained quantum wells; Off axis electron holography

Indexed keywords

ELECTRON HOLOGRAPHY; ELECTRONS; III-V SEMICONDUCTORS; PIEZOELECTRICITY; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS;

CONDITION; DIRECT OBSERVATIONS; GAN/INGAN; GAN/INGAN/GAN STRAINED QUANTUM WELL; INGAN QUANTUM WELLS; INGAN/GAN; OFF-AXIS ELECTRON HOLOGRAPHY; PHASE OFFSETS; PIEZO-ELECTRIC FIELDS; STRAINED QUANTUM WELLS;

GALLIUM NITRIDE;

EID: 0034059047     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023808     Document Type: Article

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