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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 1, 2002, Pages 68-75

Combined effect of electrode gap and radio frequency on power deposition and film growth kinetics of SiH4/H2 discharges

(3) Amanatides, E a Mataras, D a Rapakoulias, D E a

a UNIVERSITY OF PATRAS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; ELECTRODES; ELECTRON ENERGY LEVELS; ENERGY GAP; FILM GROWTH; HEATING; HYDROGEN; OPTICAL VARIABLES MEASUREMENT; REACTION KINETICS; SILANES;

DISCHARGE RADICAL PRODUCTION EFFICIENCY; ELECTRICAL DISCHARGE MEASUREMENTS; ELECTRODE GAP; ELECTRON HEATING; FILM GROWTH KINETICS; OHMIC HEATING; OPTICAL DISCHARGE MEASUREMENTS; POWER DEPOSITION;

SILICON;

EID: 0036160483 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1421599 Document Type: Article

Times cited : (16)

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