Particle formation and a-Si:H film deposition in narrow-gap RF plasma CVD

Thin Solid Films

Volumn 345, Issue 1, 1999, Pages 80-84

  Maemura, Yoko ^a   Fujiyama, Hiroshi ^a   Takagi, Tomoko ^b   Hayashi, Ryo ^c   Futako, Wataru ^b   Kondo, Michio ^b   Matsuda, Akihisa ^b  

^a NAGASAKI UNIVERSITY   (Japan)

^b Thin Film Silicon Solar Cells S   (Japan)

^c CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; FILM GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES;

HYDROGENATED AMORPHOUS SILICON; POWER DENSITY; RADIOFREQUENCY SILANE PLASMA;

AMORPHOUS FILMS;

EID: 0033531820     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00100-5     Document Type: Article

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