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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volumn 186, Issue 1-4, 2002, Pages 298-302
Prevention of impurity gettering in the Rp/2 region of ion-implanted silicon by defect engineering
(5)
Kogler R
a
Peeva, A
a
Kaschny, J
a
Skorupa, W
a
Hutter, H
b
a
INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH
(
Germany
)
b
VIENNA UNIVERSITY OF TECHNOLOGY
(
Austria
)
Author keywords
Cu; Defects; Gettering; Ion implantation; Si
Indexed keywords
CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); GETTERS; ION IMPLANTATION; POSITIVE IONS;
GETTERING EFFECT; INTERSTITIALS;
SEMICONDUCTING SILICON;
EID
:
0036135116
PISSN
:
0168583X
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1016/S0168-583X(01)00913-2
Document Type
:
Article
Times cited : (
18
)
References (
18
)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.
