Detection of metastable defective regions in ion-implanted silicon by means of metal gettering

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 463-468

  Koegler, R ^a   Posselt, M ^a   Yankov, R A ^a   Kaschny, J R ^a   Werner, P ^a   Danilin, A B ^a   Skorupa, W ^a  

^a FWI   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; CRYSTAL DEFECTS; CRYSTAL GROWTH; DISSOLUTION; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

METAL GETTERING;

SEMICONDUCTING SILICON;

EID: 0031353216     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)