Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon

Solid State Phenomena

Volumn 69, Issue , 1999, Pages 247-252

  Beaman, K L ^a,c   Glasko, J M ^a   Koveshnikov, S V ^b   Rozgonyi, G A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

^c MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; IRON; THERMODYNAMIC STABILITY;

GETTERING MECHANISMS;

SEMICONDUCTING SILICON;

EID: 0032684541     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.69-70.247     Document Type: Article

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