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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volumn 175-177, Issue , 2001, Pages 340-344
Gettering centres in high-energy ion-implanted silicon investigated by point defect recombination
(5)
Kogler R
a
Peeva, A
a
Werner, P
b
Skorupa, W
a
Gosele U
a
a
INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH
(
Germany
)
b
MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS
(
Germany
)
Author keywords
Cu; Defects; Gettering; Ion implantation; Si
Indexed keywords
COPPER; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; POINT DEFECTS;
GETTERING;
SEMICONDUCTING SILICON;
EID
:
0035302257
PISSN
:
0168583X
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1016/S0168-583X(00)00533-4
Document Type
:
Conference Paper
Times cited : (
12
)
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