Low threshold GaInNAsSb quantum well lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4651, Issue , 2002, Pages 26-31

  Shimizu, Hitoshi ^a   Setiagung, Casimirus ^a   Kumada, Kouji ^a   Kasukawa, Akihiko ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

1.3 m; GaInNAs; GaInNAsSb; GSMBE

Indexed keywords

CURRENT DENSITY; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; PELTIER EFFECT; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SURFACE ACTIVE AGENTS;

GAS-SOURCE MOLECULAR BEAM EPITAXY (GSMBE);

QUANTUM WELL LASERS;

EID: 0036057163     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467962     Document Type: Conference Paper

References (19)

1. GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
2. Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance
3. High-temperature characteristic in 1.3-μm-range highly strained GaInNAs ridge lasers grown by metal-organic chemical vapor deposition
4. High-temperature operation up to 170°C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
5. 1.29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
6. Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 μm
7. Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant
8. Low threshold lasing at 1.3 μm from GaAsSb quantum wells directly grown on GaAs substrates
9. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
10. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8mA
11. Surfactants in epitaxial growth
12. Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layer
13. High performance CW 1.26 μm GaInNAsSb-SQW ridge lasers
14. 1.31 μm GaInNAsSb/GaNAs-SQW lasers grown by gas-source MBE
15. Nonlinear gain factor of 1.26 μm GaInNAs-based SQW lasers
16. 7.8 GHz small-signal modulation bandwidth of 1.3 μm DQW GaInAsN/GaAs laser diodes
17. Transport limits in high-speed quantum-well lasers: Experiment and theory
18. Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers
19. Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x