Wafer-bonded InGaAs/Silicon avalanche photodiodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4650, Issue , 2002, Pages 37-43

  Pauchard, Alexandre ^a   Mages, P ^b   Kang, Y ^b   Bitter, M ^a   Pan, Z ^a   Sengupta, D ^a   Hummel, S ^a   Lo, Y H ^a,b   Yu, P K L ^b  

^a Nova Crystals Inc   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Avalanche; Dead space; Excess noise; InGaAs; Photodetectors; Silicon; Wafer bonding

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; CURRENT DENSITY; IONIZATION OF SOLIDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

WAFER-BONDING;

PHOTODIODES;

EID: 0036056841     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.467674     Document Type: Article

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