Avalanche noise characteristics of thin GaAs structures with distributed carrier generation

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 910-914

  Li, Kim F ^a,b   Ong, Duu S ^a,c   David, John P R ^d   Tozer, Richard C ^b   Rees, Graham J ^c   Plimmer, Stephen A ^d   Chang, Keng Y ^a   Roberts, John S ^b  

^a IEEE   (Ireland)

^b Silicon Systems Ltd (SSL)   (Ireland)

^c MULTIMEDIA UNIVERSITY   (Malaysia)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

APD; Avalanche multiplication; Avalanche noise; GaAs; Impact ionization

Indexed keywords

EID: 0005638345     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841220     Document Type: Article

References (13)

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