Buried-mesa avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 34, Issue 12, 1998, Pages 2321-2325

  Hasnain, Ghulam ^a,c,d,e,f,g   Bi, Wayne G ^a,h,i,j   Song, S ^a   Anderson, John T ^a,k,l,m   Moll, Nick ^a,m,n,o,p   Su, Chung Yi ^a   Hollenhorst, James N ^a   Baynes, Nicholas D ^b   Athroll, I ^b   Amos, Sean ^b   Ash, R M ^b  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

^c INDIAN INSTITUTE OF TECHNOLOGY   (India)

^d UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f Spec Microwave Devices Oper R   (United States)

^g LUCENT TECHNOLOGIES   (United States)

^h JILIN UNIVERSITY   (China)

ⁱ SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^j UNIVERSITY OF CALIFORNIA   (United States)

^k CASE WESTERN RESERVE UNIVERSITY   (United States)

^l UNIVERSITY OF MINNESOTA   (United States)

^m STANFORD UNIVERSITY   (United States)

ⁿ UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^o Solid State Technology Lab

^p Tau Beta Pi   (United States)

more..

Author keywords

Avalanche; Buried mesa; Gain; Implantation, lightwave; Photodiode; Receiver; Regrowth

Indexed keywords

AVALANCHE DIODES; ELECTRIC CURRENTS; EPITAXIAL GROWTH; ETCHING; ION IMPLANTATION; METALLIZING; OPTICAL COMMUNICATION EQUIPMENT; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

BURIED MESA AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0032305650     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.736100     Document Type: Article

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