High-speed, high-reliability planar-structure superlattice avalanche photodiodes for 10-Gb/s optical receivers

Journal of Lightwave Technology

Volumn 18, Issue 12, 2000, Pages 2200-2207

  Watanabe, Isao ^a   Nakata, Takeshi ^a   Tsuji, Masayoshi ^a   Makita, Kikuo ^a   Torikai, Toshitaka ^a   Taguchi, Kencho ^a,b  

^a NEC CORPORATION   (Japan)

^b Optoelectronic Industry and Technology Development Association   (Japan)

Author keywords

10 Gb s; Avalanche photodiode; Guard ring; Optical receiver; Planar structure; Reliability; Superlattice

Indexed keywords

AVALANCHE DIODES; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION EQUIPMENT; PHOTOCURRENTS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES; SIGNAL RECEIVERS; TITANIUM;

AVALANCHE PHOTODIODES; GAS SOURCE MOLECULAR BEAM EPITAXY; GUARD RING; OPTICAL RECEIVERS; PLANAR STRUCTURE;

PHOTODIODES;

EID: 0034452887     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.908834     Document Type: Article

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