Dark current reduction in fused InGaAs/Si avalanche photodiode

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2, Issue , 2001, Pages 772-773

  Kang, Y ^a   Mages, P ^a   Pauchard, A ^b   Clawson, A R ^a   Lau, S S ^a   Lo, Y H ^a   Yu, P K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Nova Crystals Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AVALANCHE DIODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; MASKS; PHOTORESISTS; POLYIMIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

AVALANCHE PHOTODIODES (APD);

PHOTODIODES;

EID: 0035656570     PISSN: 10928081     EISSN: None     Source Type: Journal    
DOI: 10.1109/LEOS.2001.969043     Document Type: Article

References (5)