Intrinsic transport properties and performance limits of organic field-effect transistors

Science

Volumn 272, Issue 5267, 1996, Pages 1462-1464

  Torsi, L ^a,b   Dodabalapur, A ^a   Rothberg, L J ^a   Fung, A W P ^a   Katz, H E ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000770340     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.272.5267.1462     Document Type: Article

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27. FET as a result of imperfect ohmic contacts. If this is the case, the data poinfs and the calculated mobilities in Fig. 2 will be offset along the y axis.
28. We thank F. Capasso, E. A. Chandross, R. C. Haddon, P. B. Littlewood, A. J. Lovinger, A. P. Mills, J. C. Phillips, E. Reichmanis, G. Scamarcio, T. Siegrist, and R. E. Slusher for their encouragement and illuminating discussions.