Nanometer-scale current-voltage spectra measurement of resonant tunneling diodes using scanning force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1154-1158

  Tanimoto, Masafumi ^a   Kanisawa, Kiyoshi ^b   Shinohara, Masanori ^a  

^a NTT CORPORATION   (Japan)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Contact resistance; Current voltage spectra; Fine structure in spectra; Negative difference resistance; Quantized point contact; Resonant tunneling diode; Scanning force microscopy

Indexed keywords

CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTIONS; MICROSCOPIC EXAMINATION; NEGATIVE RESISTANCE; POINT CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; VOLTAGE MEASUREMENT;

BALLISTIC ELECTRON EMISSION MICROSCOPY; CURRENT VOLTAGE AMPLIFIER; CURRENT VOLTAGE SPECTRA MEASUREMENT; NEGATIVE DIFFERENTIAL RESISTANCE; POTENTIAL DISTRIBUTION MEASUREMENT; RESONANT TUNNELING DIODE; SCANNING FORCE MICROSCOPY;

TUNNEL DIODES;

EID: 0030079693     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1154     Document Type: Article

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