Investigation of charge transport in thin, doped sexithiophene crystals by conducting probe atomic force microscopy

Journal of Physical Chemistry B

Volumn 102, Issue 10, 1998, Pages 1679-1688

  Loiacono, Michael J ^a   Granstrom, Eric L ^a   Frisbie, C Daniel ^a  

^a University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000840969     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp973269m     Document Type: Article

References (44)

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38. 7 6T molecules, so the concentration of dopant is ∼1 ppt.
39. Iodine is known to intercalate between layers in lamellar oligothiophene crystals (see ref 11). Therefore, it may be that the dopant cannot penetrate 1 ML crystals.
40. The importance of horizontal conductivity in the vertical measurements may be determined by examining the dependence of vertical conductance on crystallite area. We compared conductances of crystals with nearly the same area to ensure that the differences in conductance we measured were not the consequence of large differences in crystal area.
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44. Due to poor π orbital overlap along the a direction (Scheme 1A), hole mobility is much greater in the be plane of 6T crystals (see ref 9c).