High-mobility low-threshold-voltage pentacene thin-film transistors prepared at rapid growth rates by pulsed-laser deposition

Philosophical Magazine Letters

Volumn 75, Issue 3, 1997, Pages 169-177

  Salih, A J ^a   Marshall, J M ^a   Maud, J M ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; EVAPORATION; MOLECULAR ORIENTATION; MORPHOLOGY; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE ROUGHNESS;

FIELD EFFECT MOBILITY; MOLECULAR ORDERING; PENTACENE THIN FILM TRANSISTORS; THERMAL EVAPORATION (TE); THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0031103915     PISSN: 09500839     EISSN: 13623036     Source Type: Journal    
DOI: 10.1080/095008397179732     Document Type: Article

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