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Materials Science and Engineering: B
Volumn 87, Issue 3, 2001, Pages 271-276
Si-Ge-C growth and devices
(1)
Greve, D W
a
a
CARNEGIE MELLON UNIVERSITY
(
United States
)
Author keywords
Epitaxial layers; Germanium; Silicon
Indexed keywords
CARBON; ENERGY GAP; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS;
EPITAXIAL LAYERS;
SEMICONDUCTOR GROWTH;
EID
:
0035915291
PISSN
:
09215107
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1016/S0921-5107(01)00724-3
Document Type
:
Article
Times cited : (
8
)
References (
33
)
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