Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 167-170

  Ichikawa, A ^a   Hirose, Y ^a   Ikeda, T ^a   Noda, T ^b   Fujiu, M ^b   Takatsuka, T ^b   Moriya, A ^b   Sakuraba, M ^b   Matsuura, T ^b   Murota, J ^b  

^a TAIYO NIPPON SANSO CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; ION IMPLANTATION; LANGMUIR BLODGETT FILMS; LATTICE CONSTANTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); VEGARD'S LAW;

SEMICONDUCTING FILMS;

EID: 0034226231     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00799-9     Document Type: Article

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