SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 105-111

Improved growth morphology of Si-Ge-C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy

(5) Croke, E T a Hunter, A T a Pettersson, P O b Ahn, C C b McGill, T C b

a Hughes Aircraft Co (United States)

b CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Growth morphology; Heterostructures; Molecular beam epitaxy; Surfactants

Indexed keywords

MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; MULTILAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS;

HETEROEPITAXY; HETEROSTRUCTURES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031070224 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(96)09256-5 Document Type: Article

Times cited : (11)

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