Si1-x-yGexCy-channel p-MOSFET's with improved thermal stability

IEEE Electron Device Letters

Volumn 21, Issue 6, 2000, Pages 292-294

  Mocuta, A C ^a   Greve, D W ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CARRIER MOBILITY; HETEROJUNCTIONS; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY; THERMOOXIDATION;

MOLE FRACTION;

MOSFET DEVICES;

EID: 0033746928     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.843154     Document Type: Article

References (14)

1. S. Verdonckt-Vandebroek et al., "SiGe-channel heterojunction p-MOS-FETs," IEEE Trans. Electron Devices, vol. 41, p. 90, 1994.
2. 1 - x PMOS," IEEE Electron Device Lett., vol. 12, p. 154, 1991.
3. 1 - x/Si heterostructure inversion layers," IEEE Electron Device Lett., vol. 13, p. 56, 1992.
4. S. P. Voinigescu, C. A. T. Salama, J.-P. Noel, and T. I. Kamins, "Optimized Ge channel profiles for VLSI compatible Si/SiGe p-MOSFET's," in IEDM Tech. Dig., 1994, p. 369.
5. x/Si strained layer superlattices," Appl. Phys. Lett., vol. 60, p. 2758, 1992.
6. y/Si quantum wells grown by rapid thermal chemical vapor deposition," J. Appl. Phys., vol. 85, pp. 2124-2128, 1999.
7. y channel," Appl. Phys. Lett., vol. 74, p. 847, 1999.
8. y/Si quantum wells grown by rapid thermal chemical vapor deposition," J. Appl. Phys., vol. 85, p. 2124, 1999.
9. A. C. Mocuta and D. W. Greve, "Carbon incorporation in SiGeC alloys grown by ultrahigh vacuum chemical vapor deposition," J. Vac. Sci. Technol., vol. A17, p. 1239, 1999.
10. y alloys: The role of surface and gas phase reactions," J. Appl. Phys., vol. 85, p. 1240, 1999.
11. A. C. Mocuta, Ph.D. dissertation, Dept. Elect. Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, 1999.
12. D. W. Greve and V. R. Hay, "Interpretation of capacitance-voltage characteristics of polysilicon thin film transistors," J. Appl. Phys., vol. 61, p. 1176, 1987.
13. C. G. Sodini, T. W. Ekstedt, and J. L. Moll. "Charge accumulation and mobility in thin dielectric MOS transistors," Solid-State Electron., vol. 25, p. 833, 1982.
14. S. John, private communication.