Structural and optical properties of GaN films grown by the direct reaction of Ga and NH3 in a CVD reactor

Solid-State Electronics

Volumn 44, Issue 9, 2000, Pages 1655-1661

  Yang, Seung Hyun ^a   Hyun Ahn, Sang ^a   Suk Jeong, Moon ^a   Nahm, Kee Suk ^a   Suh, Eun Kyung ^a   Young Lim, Kee ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; THICK FILMS; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0342918648     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00098-8     Document Type: Article

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