Crystal structure of GaN grown on 3C-SiC substrates by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4241-4245

  Wu, Jun ^a   Yaguchi, Hiroyuki ^a   Nagasawa, Hiroyuki ^b   Yamaguchi, Yoichi ^b   Onabe, Kentaro ^a   Shiraki, Yasuhiro ^c   Ito, Ryoichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b HOYA CORPORATION   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

3C SiC substrate 1,1 dimethylhydrazine (DMHy); Cubic GaN; GaN; Hexagonal GaN; MOVPE; X ray diffraction

Indexed keywords

DIMETHYLHYDRAZINE; GROWTH TEMPERATURE;

CRYSTAL STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SILICON CARBIDE; SUBSTRATES; SURFACES; X RAY DIFFRACTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031189839     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4241     Document Type: Article

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