Effects of radiation-induced defects on H+ transport in SiO2

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 215-218

  Stahlbush, R E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HYDROGEN; IRRADIATION; SEMICONDUCTING SILICON COMPOUNDS; SILICA; TRANSPORT PROPERTIES;

HYDROGEN-ANNEALING MODELS; RADIATION-INDUCED DEFECTS; RAPID POINT-CONTACT TRANSISTOR MEASUREMENTS;

MOS DEVICES;

EID: 0033190158     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00373-1     Document Type: Article

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