Defect controlled diffusion in the epitaxial growth of germanium on Si(1 0 0)

Applied Surface Science

Volumn 175, Issue 176, 2001, Pages 69-76

  Berrie, Cindy L ^a,b   Liu, Bing ^a   Leone, Stephen R ^a  

^a UNIVERSITY OF COLORADO   (United States)

^b UNIVERSITY OF KANSAS   (United States)

Author keywords

68.35.Bs; 68.35.Fx; Film growth; Germanium diffusion

Indexed keywords

ANNEALING; ARGON; ATOMIC FORCE MICROSCOPY; DESORPTION; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; GERMANIUM; OXYGEN; PLASMA ETCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SPUTTERING; SURFACE PHENOMENA;

OXYGEN PLASMA DISCHARGES;

METALLIC FILMS;

EID: 0035873125     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00057-5     Document Type: Article

References (28)

1. Jiang H., Singh J. IEEE J. Quantum Electronics. 34:1998;1188.
2. Mil'vidskii M.G., Chaldyshev V.V. Semiconductors. 32:1998;457.
3. Shchukin V.A., Ledentsov N.N., Grundmann M., Kop'ev P.S., Bimberg D. Surf. Sci. 352-354:1996;117.
4. Seifert W., Carlsson N., Miller M., Pistol M.-E., Samualson L., Wallenberg L.R. Prog. Cryst. Growth Charact. 33:1996;423.
5. Kamins T.I., Carr E.C., Williams R.S., Rosner S.J. J. Appl. Phys. 81:1997;211.
6. Medeiros-Ribero G., Bratovski A.M., Kamins T.I., Ohlberg D.A.A., Williams R.S. Science. 279:1998;353.
7. Eaglesham D.J., Cerullo M. Phys. Rev. Lett. 64:1990;1943.
8. Mo Y.-W., Savage D.E., Swartzentruber B.S., Lagally M.G. Phys. Rev. Lett. 65:1990;1020.
9. Kim E.S., Usami N., Shiraki Y. Appl. Phys. Lett. 72:1998;1617.
10. Shklyaev A.A., Shibata M., Ichikawa M. Appl. Phys. Lett. 72:1998;320.
11. Weil J.D., Deng X., Krishnamurthy M. J. Appl. Phys. 83:1998;212.
12. Krishnamurthy M., Yang B.-K., Weil J.D., Slough C.G. Appl. Phys. Lett. 70:1997;49.
13. Deng X., Krishnamurthy M. Phys. Rev. Lett. 81:1998;1473.
14. Kamins T.I., Williams R.S. Appl. Phys. Lett. 71:1997;1201.
15. Vesan L. J. Cryst. Growth. 194:1998;173.
16. Vescan L., Grimm K., Goryll M., Hollander B. Mat. Sci. Eng. B. 69/70:2000;324.
17. Xie Y.H., Samavedam S.B., Bulsara M., Langdo T.A., Fitzgerald E.A. Appl. Phys. Lett. 71:1997;3567.
18. Sakamoto K., Matsuhata H., Tanner M.O., Wang D., Wang K.L. Thin Solid Films. 321:1998;55.
19. Jin G., Tang Y.S., Liu J.L., Wang K.L. Appl. Phys. Lett. 74:1999;2471.
20. Krishnamurthy M., Drucker J.S., Venables J.A. J. Appl. Phys. 69:1991;6461.
21. Ott A.K., Casey S.M., Alstrin A.L., Leone S.R. J. Vac. Sci. Technol. B. 14:1996;2742.
22. Sneh O., George S.M. J. Phys. Chem. 99:1995;4639.
23. Poppa H., Moorhead D., Heinemann K. Thin Solid Films. 128:1985;251.
24. B. Liu, C.L. Berrie, S.R. Leone, in preparation.
25. Berrie C.L., Leone S.R. J. Cryst. Growth. 216:2000;159.
26. Nützel J.F., Abstreiter G. Phys. Rev. B. 53:1996;13551.
27. Kaxiras E. Thin Solid Films. 272:1996;386.
28. Hartman A., Vescan L., Dieker C., Luth H. Mater. Sci. Technol. 11:1995;410.