Chemistry of arsenic incorporation during GaAs/GaAs(100) molecular beam epitaxy probed by simultaneous laser flux monitoring and reflection high-energy electron diffraction

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2742-2752

  Ott, Adina K ^a  

^a UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000383743     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589013     Document Type: Article

References (20)

1. J. H. Neave, B. A. Joyce, P. J. Dobson, and N. Norton, Appl. Phys. A 31, 1 (1983).
2. J. H. Neave, P. J. Dobson, B. A. Joyce, and J. Zhang, Appl. Phys. Lett. 47, 100 (1985).
3. B. F. Lewis, R. Fernandez, A. Madhukar, and F. J. Grunthaner, J. Vac. Sci. Technol. B 4, 560 (1986).
4. R. Chow and R. Fernandez, Mater. Res. Soc. Symp. Proc. 145, 13 (1989).
5. A. Bosacchi, S. Franchi, Yu. O. Kanter, and S. I. Chikichev, J. Cryst. Growth 96, 899 (1989).
6. C. W. Farley and B. G. Streetman, J. Vac. Sci. Technol. B 6, 749 (1988).
7. C. W. Farley, G. J. Sullivan, M. J. Mondry, and D. L. Miller, J. Cryst. Growth 96, 19 (1989).
8. C. Deparis and J. Massies, J. Cryst. Growth 108, 157 (1991).
9. H. Nörenberg and N. Koguchi, Surf. Sci. 296, 199 (1993).
10. S. Yu. Karpov, Yu. V. Kovalchuk, V. E. Myachin, Yu. V. Pogorelsky, Surf. Sci. 314, 79 (1994).
11. J. C. Garcia, C. Neri, and J. Massies, J. Cryst. Growth 98, 511 (1989).
12. B. A. Joyce, T. Shitara, A. Yoshinaga, D. D. Vvedensky, J. H. Neave, and J. Zhang, Appl. Surf. Sci. 60/61, 200 (1992).
13. A. Yoshinaga, M. Fahy, S. Dosanjh, J. Zhang, J. H. Neave, and B. A. Joyce, Surf. Sci. Lett. 264, L157 (1992).
14. H. Yamaguchi and Y. Horikoshi, Appl. Surf. Sci. 60/61, 224 (1992).
15. C. T. Foxon and B. A. Joyce, Surf. Sci. 64, 293 (1977).
16. C. T. Foxon and B. A. Joyce, Surf. Sci. 50, 434 (1975).
17. S. V. Ghaisas and A. Madhukar, J. Vac. Sci. Technol. B 3, 540 (1985).
18. S. V. Ghaisas and A. Madhukar, Phys. Rev. Lett. 56, 1066 (1986).
19. S. V. Ghaisas and A. Madhukar, J. Appl. Phys. 65, 3872 (1989).
20. B. K. Medvedev, V. G. Mokerov, and N. V. Peskov, Phys. Dokl. 38, 124 (1994).