Epitaxial growth of stoichiometric (100) GaAs at 75°C

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3850-3854

  Taylor, Patrick J ^a,c   Jesser, W A ^a   Martinka, M ^b   Dinan, J H ^b  

^a University of Virginia   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^c MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STOICHIOMETRY; SURFACE ROUGHNESS;

LIMITED THICKNESS EPITAXY (LTE); MIGRATION ENHANCED EPITAXY (MEE);

SEMICONDUCTING FILMS;

EID: 0032607994     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369778     Document Type: Article

References (18)

1. D. Eaglesham, J. Appl. Phys. 77. 3597 (1995).
2. T. Cheng, C. Chang, A. Chin, M. Huang, and J. Huang. Appl. Phys. Lett. 64, 2517 (1994).
3. J. Stormer, W. Trifthauser, N. Hozhabri, and K. Alavi, Appl. Phys. Lett. 69, 1867 (1996).
4. X. Liu, P. Prasad, W. Chen, A. Kurpiewski, A. Stoschek, Z. Liliental-Weber, and E. Weber, Appl. Phys. Lett. 67, 1333 (1995).
5. Y. Horikoshi, Semicond. Sci. Technol. 8. 1032 (1993).
6. J. Neave and B. Joyce, Appl. Phys. A: Solids Surf. 31, 1 (1983).
7. L. Davis, P. Palmberg, N. MacDonald, G. Piach, and R. Weber, Handbook of Auger Electron Spectroscopy, 2nd ed. (Perkin-Elmer, Eden Prarie, MN 1976), p. 17.
8. M. P. Sean and W. A. Dench, Surf. Interface Anal. 1, 2 (1979).
9. W. Ranke and K. Jacobi, Surf. Sci. 47, 525 (1979).
10. P. Pianetta, I. Lindau, and W. E. Spicer, Quantitative Surface Analysis of Materials, ASTM STP 643, edited by N. S. McIntyre (American Society for Testing Materials, Philadelphia, 1978), p. 105.
11. W. Storm, D. Walany, F. Schroder, G. Becker, B. Burkhardt, L. Wiedmann, and A. Benninghoven, J. Vac. Sci. Technol. B 12, 11 (1994).
12. C. C. Chang, in Characterization of Solid Surfaces, edited by P. F. Kane and G. B. Larrabee (Plenum, New York, 1978); C. Chang, "General Formalism for Quantitative Auger Analysis," University of Missouri Conference, Surface Science, preprint June, 1979, p. 412.
13. C. C. Chang, in Characterization of Solid Surfaces, edited by P. F. Kane and G. B. Larrabee (Plenum, New York, 1978); C. Chang, "General Formalism for Quantitative Auger Analysis," University of Missouri Conference, Surface Science, preprint June, 1979, p. 412.
14. The growth time of the arsenic layer relative to that of gallium is 0.25-0.5 (for sticking coefficient of 0.5 and 1.0) (see EPI Application Note 3., EPI Application Note 4., EPI MBE Products Group, 4900 Constellation Drive, St. Paul, MN 55127) than that expected from beam equivalent pressures and the relative ionization efficiency (see EPI Application Note 6., EPI MBE Products Group, 4900 Constellation Drive, St. Paul, MN 55127) of gallium and tetrameric arsenic. This is attributed to the partial obstruction of the incident tetrameric arsenic flux which enters the ion gauge due to the source and gauge relative orientation inside the MBE chamber.
15. S. Nagata and T. Tanaka, J. Appl. Phys. 48, 940 (1977).
16. M. Seta, H. Asahi, S. Kim, K. Asami, and S. Gonda, J. Appl. Phys. 74, 5033 (1993).
17. Y. Homma and Y. Horikoshi, Appl. Phys. Lett. 68, 63 (1996).
18. Y. Taguchi, S. Kawashima, A. Takahei, and Y. Horikoshi, Appl. Phys. Lett. 63, 1074 (1993).