Monolithic integration of III-V materials and devices on silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3630, Issue , 1999, Pages 19-28

  Ting, Steve ^a   Bulsara, Mayank ^a   Yang, Vicky ^a   Groenert, Mike ^a   Samavedam, Srikanth ^a   Currie, Matt ^a   Langdo, Thomas ^a   Fitzgerald, Eugene ^a   Joshi, Abhay ^a   Brown, Rene ^a   Wang, Xinde ^a   Sieg, Robert ^a   Ringel, Steve ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY (SPECIFIC GRAVITY); EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLITHIC INTEGRATED CIRCUITS; MOSFET DEVICES; PHOTOLUMINESCENCE; PRESSURE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES;

ANTIPHASE DISORDER; MONOLITHIC INTEGRATION; THREADING DISLOCATION DENSITIES;

SEMICONDUCTOR MATERIALS;

EID: 0033608023     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.342796     Document Type: Conference Paper

References (37)