Reduced carbon contaminant, low-temperature silicon substrate preparation for "defect-free" homoepitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 1153-1159

  Taylor, Patrick J ^a,d   Jesser, W A ^a   Martinka, M ^b   Singley, K M ^b   Dinan, J H ^b   Lareau, R T ^c   Wood, M C ^c   Clark III, W W ^c  

^a University of Virginia   (United States)

^b NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000095312     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581789     Document Type: Article

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