High-performance InGaAs photodetectors on Si and GaAs substrates

Applied Physics Letters

Volumn 67, Issue , 1995, Pages 3936-

  Ejeckam, F E ^a   Chua, C L ^a   Zhu, Z H ^a   Lo, Y H ^a   Hong, M ^b   Bhat, R ^c  

^a Department of Molecular Biology and Genetics   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENT MEASUREMENT; FABRICATION; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON;

DARK CURRENTS; INDIUM GALLIUM ARSENIDE; RESPONSIVITY; WAFER BONDING;

PHOTODETECTORS;

EID: 0029511778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.114410     Document Type: Article

References (0)