Growth of improved GaAs/Si: suppression of Volmer-Weber nucleation for reduced threading dislocation density

Materials Research Society Symposium - Proceedings

Volumn 535, Issue , 1999, Pages 39-44

  Taylor, P J ^a   Lesser, W A ^a   Simonis, G ^b   Chang, W ^b   Lara Taysing, M ^b   Bradshaw, J ^c   Clark, W ^c   Martinka, M ^c   Benson, J D ^d   Dinan J H ^d  

^a University of Virginia   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Night Vision and Electronics Sensors Directorate   (United States)

^d MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COALESCENCE; DEPOSITION; DISLOCATIONS (CRYSTALS); LOW TEMPERATURE OPERATIONS; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

DISLOCATION DENSITY; VOLMER-WEBER NUCLEATION;

MOLECULAR BEAM EPITAXY;

EID: 0033356640     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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