Low-temperature microscopic photoluminescence images of epitaxially laterally overgrown GaN

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 4 B, 2001, Pages

  Yoshimoto, Masahiro ^a   Saraie, Junji ^a   Nakamura, Shuji ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b University of California   (United States)

Author keywords

Donor; Exciton; GaN; Lateral growth; Microscopic photoluminescence

Indexed keywords

DISLOCATIONS (CRYSTALS); EXCITONS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEAR FIELD SCANNING OPTICAL MICROSCOPY; PHOTOEMISSION; PHOTOLUMINESCENCE;

MICROSCOPIC PHOTOLUMINESCENCE;

GALLIUM NITRIDE;

EID: 0035870390     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l386     Document Type: Article

References (13)