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Volumn 197, Issue 1-2, 1999, Pages 113-128

A quantitative study of compositional profiles of chemical vapour-deposited strained silicon-germanium/silicon layers by transmission electron microscopy

(2) Walther, T a,b Humphreys, C J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b UNIVERSITY OF BONN (Germany)

Author keywords

ADF; EDX; EELS; HREM; LPCVD; SiGe

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERDIFFUSION (SOLIDS); MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

HIGH-ANGLE ANNULAR DARK-FIELD IMAGING (HAADF); LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SILICON GERMANIUM; TWO-STATE EXCHANGE MODEL;

HETEROJUNCTIONS;

EID: 0033079349 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00930-0 Document Type: Article

Times cited : (44)

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