Atomistic modeling of chemical vapor deposition: Silicon nitride CVD from dichlorosilane and ammonia

Materials Science in Semiconductor Processing

Volumn 3, Issue 1-2, 2000, Pages 23-29

  Bagatur'Yants, A A ^a,b   Novoselov, K P ^a   Safonov, A A ^a   Savchenko, L L ^a   Cole, J V ^a   Korkin, A A ^a  

^a SOFT TEC   (Russian Federation)

^b MOTOROLA INC   (United States)

Author keywords

Ab initio calculations; Chemical vapor deposition; Gas surface reactions; Silicon nitride

Indexed keywords

EID: 0002180180     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00006-8     Document Type: Article

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