Electronic structures of p-type GaN codoped with Be or Mg as the acceptors and Si or O as the donor codopants

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 532-536

  Yamamoto, Tetsuya ^a,b   Katayama Yoshida, Hiroshi ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b ASAHI CHEMICAL INDUSTRY CO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Codoping; First principles calculations; GaN; Madelung energy

Indexed keywords

BERYLLIUM; COMPUTATIONAL METHODS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC STRUCTURE; MAGNESIUM; OXYGEN; SEMICONDUCTOR DOPING; SILICON;

FIRST PRINCIPLES CALCULATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094262     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00346-7     Document Type: Article

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