Complex nature of acceptor levels in aluminum gallium nitrides doped with magnesium

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 5 A, 2001, Pages

  Zohta, Yasuhito ^a   Iwasaki, Yoshitaka ^a   Nakamura, Shuji ^b,c   Mukai, Takashi ^b  

^a TOKYO UNIVERSITY OF TECHNOLOGY   (Japan)

^b NICHIA CORPORATION   (Japan)

^c University of California   (United States)

Author keywords

Blue LED; Depletion layer; Frequency dependent conductance; GalnN; Mg accepter; Nitride semiconductors

Indexed keywords

ACTIVATION ENERGY; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FREQUENCIES; LIGHT EMITTING DIODES; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

DEPLETION LAYER; FREQUENCY DEPENDENT CONDUCTANCE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035329206     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l423     Document Type: Article

References (11)