n-type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine

Applied Physics Letters

Volumn 71, Issue 7, 1997, Pages 945-947

  Nishimori, Toshihiko ^a   Nakano, Koji ^a   Sakamoto, Hitoshi ^a   Takakuwa, Yuji ^b   Kono, Shozo ^b  

^a MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001659182     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119922     Document Type: Article

References (15)

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