Improved properties of silicon nitride films prepared by the catalytic chemical vapor deposition method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 7035-7040

  Okada, Shinya ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Cat CVD method; Low hydrogen content; Passivation films; Silicon nitride films; Step coverage

Indexed keywords

CATALYSTS; CATALYTIC CRACKING; CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONDUCTIVITY OF SOLIDS; ETCHING; HYDROGEN; OPTICAL PROPERTIES; PASSIVATION; PROTECTIVE COATINGS;

CATALYTIC CHEMICAL VAPOR DEPOSITION; PASSIVATION FILMS;

SILICON NITRIDE;

EID: 0031273951     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7035     Document Type: Article

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