Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures

Applied Physics Letters

Volumn 77, Issue 17, 2000, Pages 2752-2754

  Sato, Hidekazu ^a,b   Izumi, Akira ^b   Matsumura, Hideki ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001579066     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1319513     Document Type: Article

References (12)

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