Alternating phase-shifting mask with reduced aberration sensitivity: Lithography considerations

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 1, 2001, Pages 420-428

  Wong, Alfred K ^a,b   Liebmann, Lars W ^a   Molless, Antoinette F ^a  

^a IBM RESEARCH   (United States)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Aberrations; Alternating phase shifting mask; Enhanced alternating phase shifting mask; Optical lithography; Phase shifting mask

Indexed keywords

ABERRATIONS; FITS AND TOLERANCES; PHASE SHIFT; PHOTOLITHOGRAPHY; SENSITIVITY ANALYSIS;

LIGHT-FIELD TRIM MASKS;

MASKS;

EID: 0035758401     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.435742     Document Type: Article

References (23)

1. M. Levenson, N. Viswanathan, and R. Simpson, "Improving resolution in photolithography with a phase-shifting mask, " IEEE Transactions on Electron Devices 29, pp. 1812-1846, Dec. 1982.
2. T. Brunner, P. Sanda, M. Wordeman, and T. Lii, "170 nm gates fabricated by phase-shift mask and top antireflector process, " in Proc. SPIE, J. Cuthbert, ed., vol. 1927, pp. 182-189, 1993.
3. S. Nakao, J. Itoh, A. Nakae, I. Kanai, T. Saitoh, H. Matsubara, K. Tsujita, I. Arimoto, and W. Wakamiya, "Extension of KrF lithography to sub-50 nm pattern formation, " in Proc. SPIE, C. Progler, ed., vol. 4000, pp. 358-365, 2000.
4. A. Wong, R. Ferguson, and S. Mansfield, "The mask error factor in optical lithography, " IEEE Transactions on Semiconductor Manufacturing 13, pp. 235-242, May 2000.
5. R. Kostelak, C. Pierrat, J. Garofalo, and S. Vaidya, "Exposure characteristics of alternate aperture phase-shifting masks fabricated using a subtractive process, " J. Vac. Sci. Technol. B 10, pp. 3055-3061, Nov. 1992.
6. A. Wong and A. Neureuther, "Mask topography effects in projection printing of phase-shifting masks, " IEEE Transactions on Electron Devices 41, pp. 895-902, June 1994.
7. R. Ferguson, L. Liebmann, S. Mansfield, D. O'Grady, and A. Wong, "Exact transmission balanced alternating phase-shifting mask for photolithography." U.S. patent #5932377, Aug. 1999.
8. J.N. Wiley, T.Y. Fu, T. Tanaka, S. Takeuchi, S. Aoyama, J. Miyazaki, and Y. Watakabe, "Phase shift mask pattern accuracy requirements and inspection technology, " in Proc. SPIE, W. H. Arnold, ed., vol. 1464, pp. 346-355, SPIE, 1991.
9. L. Liebmann, S. Mansfield, A. Wong, J. Smolinski, S. Peng, K. Kimmel, M. Rudzinski, J. Wiley, and L. Zurbrick, "High-resolution ultraviolet defect inspection of DAP (darkfield alternate phase) reticles, " in Proc. SPIE, F. Abboud and B. Grenon, eds., vol. 3873, pp. 148-161, 1999.
10. A.K. Wong, Resolution Enhancement Techniques in Optical Lithography, section 5.3.3, pp. 128-130. SPIE Press, 2001.
11. L. Liebmann, S. Mansfield, A. Wong, M. Lavin, W. Leipold, and T. Dunham, "TCAD/EDA development for lithography resolution enhancement, " IBM J. Res. Develop., 2001.
12. V.N. Mahajan, "Zernike circle polynomials and optical aberrations of systems with circular pupils, " Engineering and Laboratory Notes, pp. S-21-S-24, Aug. 1994.
13. R. Schenker, "Effects of phase shift masks on across field linewidth control, " in Proc. SPIE, L. van den Hove, ed., vol. 3679, pp. 18-26, 1999.
14. C. Progler and A. Wong, "Zernike coefficients: are they really enough?, " in Proc. SPIE, C. Progler, ed., vol. 4000, pp. 40-52, 2000.
15. H.-Y. Liu, L. Karklin, Y.-T. Wang, and Y. C. Pati, "The application of alternating phase-shifting masks to 140nm gate patterning: Line width control improvements and design optimization, " in Proc. SPIE, vol. 3236, pp. 328-337, 1998.
16. A. Wong, R. Ferguson, S. Mansfield, A. Molless, D. Samuels, R. Schuster, and A. Thomas, "Level-specific lithography optimization for 1 Gb DRAM, " IEEE Transactions on Semiconductor Manufacturing 13, pp. 76-87, Feb. 2000.
17. S.M. Mansfield, L.W. Liebmann, A.F. Molless, and A.K. Wong, "Lithographic comparison of assist feature design strategies, " in Proc. SPIE, C. Progler, ed., vol. 4000, pp. 63-76, 2000.
18. M.D. Prouty and A.R. Neureuther, "Optical imaging with phase shift masks, " in Proc. SPIE, vol. 470, pp. 228-232, 1984.
19. A.K. Wong, A.F. Molless, T.A. Brunner, E. Coker, R.H. Fair, G.L. Mack, and S.M. Mansfield, "Characterization of line width variation, " in Proc. SPIE, C. Progler, ed., vol. 4000, pp. 184-191, 2000.
20. Y.C. Pati and T. Kailath, "Phase-shifting masks for microlithography: automated design and mask requirements, " J. Opt. Soc. Am. A 11, pp. 2438-2452, Sept. 1994.
21. K. Ooi, K. Koyama, and M. Kiryu, "Method of designing phase-shifting masks utilizing a compactor, " Jpn. J. Appl. Phys. 33, pp. 6774-6778, Dec. 1994.
22. A. Moniwa, T. Terasawa, K. Nakajo, J. Sakemi, and S. Okazaki, "Heuristic method for phase-conflict minimization in automatic phase-shift mask design, " Jpn. J. Appl. Phys. 34, pp. 6584-6589, Dec. 1995.
23. T. Haruki, R. Tsujimura, J. Tomida, Y. Machida, S. Asai, and I. Hanju, "Development of total support CAD system for alternate-type PSMs with optical proximity correction, " in Proc. SPIE, vol. 3748, pp. 222-232, 1999.