The application of alternating phase-shifting masks to 140 nm gate patterning: Line width control improvements and design optimization

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3236, Issue , 1997, Pages 328-337

  Liu, Hua Yu ^a   Karklin, Linard ^b   Wang, Yao Ting ^b   Pati, Y C ^b  

^a HEWLETT PACKARD COMPANY   (United States)

^b SYNOPSYS INC   (United States)

Author keywords

CD control; Line width variation; Optical lithography; Phase shifting mask

Indexed keywords

CD CONTROL; DESIGN OPTIMIZATIONS; GATE LENGTHS; LINE WIDTH VARIATION; NOVEL APPLICATIONS; OPTICAL LITHOGRAPHY; PHASE-SHIFTING MASK;

KRYPTON; OPTIMIZATION; PHOTOLITHOGRAPHY; PHOTOMASKS;

OPTICAL RESOLVING POWER;

EID: 33846593893     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.301204     Document Type: Conference Paper

References (3)

1. Hua-Yu Liu, Crid Yu, and Bob Gleason, "Intrafield linewidth variances in 0.25 μm I-line lithography", J. Vac. Sci. Technol. B 13(6), Nov/Dec 1995, pp. 2909-2913
2. Hua-Yu Liu, Crid Yu, and Bob Gleason, "Effect of reticle errors on systematic intrafield line width variations", Jpn. J. Appl. Phys. 34(12B), Dec. 1995, pp. 6573-6577
3. Crid Yu, Costas J. Spanos and Hua-Yu Liu, "Lithography error sources quantified by statistical metrology", Solid State Technology Feb. 1996, pp. 93-102