Detection of magnetic resonance on shallow donor - shallow acceptor and deep (2.2 eV) recombination from GaN films grown on 6H-SiC

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 667-672

  Glaser, E R ^a   Kennedy, T A ^a   Brown, S W ^a   Freitas Jr , J A ^a   Perry, W G ^a   Bremser, M D ^a   Weeks, T W ^a   Davis, R F ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; MAGNETIC RESONANCE; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SILICON CARBIDE; SUBSTRATES;

DEEP DONOR; EFFECTIVE MASS; GALLIUM NITRIDE; OPTICALLY DETECTED MAGNETIC RESONANCE; SHALLOW ACCEPTOR; SHALLOW DONOR;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726754     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)